Diamond film formation by OH radical injection from remote microwave H-2/H2O plasma into parallel-plate RF methanol plasma

被引:13
作者
Ikeda, M [1 ]
Mizuno, E [1 ]
Hori, M [1 ]
Goto, T [1 ]
Yamada, K [1 ]
Hiramatsu, M [1 ]
Nawata, M [1 ]
机构
[1] MEIJO UNIV,FAC SCI & TECHNOL,DEPT ELECT & ELECT ENGN,NAGOYA,AICHI 468,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 9A期
关键词
diamond film; RF methanol plasma; microwave H-2/H2O plasma; H radical; OH radical;
D O I
10.1143/JJAP.35.4826
中图分类号
O59 [应用物理学];
学科分类号
摘要
Diamond film was successfully synthesized for the first time using a parallel-plate radio-frequency (RF 13.56 MHz) methanol (CH3OH) plasma assisted by injection of hydrogen (H) and hydroxyl (OH) radicals generated by microwave H-2/H2O plasma. OH radical, in addition to H radical, injection into RF CH3OH plasma enhanced selective diamond growth and selective etching of the nondiamond phase. The effects of OH radical injection on the initial and growth stages of the diamond formation were investigated by changing H2O partial pressure in the microwave plasma. It was found that OH radical injection into RF CH3OH plasma, enhanced the growth of diamond in the initial stage.
引用
收藏
页码:4826 / 4832
页数:7
相关论文
共 23 条
[1]  
CURITS MG, 1992, J CHEM SOC FARADAY T, V88, P2805
[2]   DETAILED SURFACE AND GAS-PHASE CHEMICAL-KINETICS OF DIAMOND DEPOSITION [J].
FRENKLACH, M ;
WANG, H .
PHYSICAL REVIEW B, 1991, 43 (02) :1520-1545
[3]   SCALING LAWS FOR DIAMOND CHEMICAL-VAPOR-DEPOSITION .1. DIAMOND SURFACE-CHEMISTRY [J].
GOODWIN, DG .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) :6888-6894
[4]   EFFECTS OF OXYGEN ON DIAMOND GROWTH [J].
HARRIS, SJ ;
WEINER, AM .
APPLIED PHYSICS LETTERS, 1989, 55 (21) :2179-2181
[5]   MECHANISM FOR DIAMOND GROWTH FROM METHYL RADICALS [J].
HARRIS, SJ .
APPLIED PHYSICS LETTERS, 1990, 56 (23) :2298-2300
[6]   SYNTHESIS OF DIAMOND USING RF MAGNETRON METHANOL PLASMA CHEMICAL-VAPOR-DEPOSITION ASSISTED BY HYDROGEN RADICAL INJECTION [J].
IKEDA, M ;
HORI, M ;
GOTO, T ;
INAYOSHI, M ;
YAMADA, K ;
HIRAMATSU, M ;
NAWATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (5A) :2484-2488
[7]   CH3OH CONCENTRATION AND TOTAL PRESSURE-DEPENDENCE OF DIAMOND FILMS FORMED FROM CH3OH-H2 MIXED-GAS BY MAGNET-ACTIVE MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION [J].
KADONO, M ;
INOUE, T ;
MIYANAGA, A ;
YAMAZAKI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (07) :3231-3236
[8]   DIAMOND SYNTHESIS FROM GAS-PHASE IN MICROWAVE PLASMA [J].
KAMO, M ;
SATO, Y ;
MATSUMOTO, S ;
SETAKA, N .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :642-644
[9]   EFFECTS OF H2O ON ATOMIC-HYDROGEN GENERATION IN HYDROGEN PLASMA [J].
KIKUCHI, J ;
FUJIMURA, S ;
SUZUKI, M ;
YANO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6B) :3120-3124
[10]   NATIVE-OXIDE REMOVAL ON SI SURFACES BY NF3-ADDED HYDROGEN AND WATER-VAPOR PLASMA DOWNSTREAM TREATMENT [J].
KIKUCHI, J ;
IGA, M ;
OGAWA, H ;
FUJIMURA, S ;
YANO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B) :2207-2211