Experimental evidence of the temperature and angular dependence in SEGR

被引：5

作者：

Mouret, I

Calvet, MC

Calvel, P

Tastet, P

Allenspach, M

LaBel, KA

Titus, JL

Wheatley, CF

Schrimpf, RD

Galloway, KF

机构：

[1] AEROSPATIALE,LES MUREAUX,FRANCE

[2] UNIV ARIZONA,TUCSON,AZ 85721

[3] ALCATEL ESPACE,TOULOUSE,FRANCE

[4] CTR NATL ETUD SPATIALES,F-31055 TOULOUSE,FRANCE

[5] NASA,GODDARD SPACE FLIGHT CTR,GREENBELT,MD 20771

[6] USN,CTR SURFACE WARFARE,CRANE,IN 47522

[7] RR2,DRUMS,PA 18222

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/23.510737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments show that a normal incident favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity.

引用

页码：936 / 943

页数：8

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