A CONCEPTUAL-MODEL OF SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS

被引：68

作者：

BREWS, JR ^{[1
]}

ALLENSPACH, M ^{[1
]}

SCHRIMPF, RD ^{[1
]}

GALLOWAY, KF ^{[1
]}

TITUS, JL ^{[1
]}

WHEATLEY, CF ^{[1
]}

机构：

[1] USN,CTR SURFACE WARFARE,CRANE DIV,CRANE,IN 47522

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 06期

关键词：

D O I：

10.1109/23.273457

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physical model of hole-collection following a heavy-ion strike is proposed to explain the development of oxide fields sufficient to cause single-event gate rupture in power MOSFET's. It is found that the size of the maximum field and the time at which it is attained are strongly affected by the hole mobility.

引用

收藏

页码：1959 / 1966

页数：8

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