EXPERIMENTAL-EVIDENCE FOR A NEW SINGLE-EVENT UPSET (SEU) MODE IN A CMOS SRAM OBTAINED FROM MODEL VERIFICATION

被引：21

作者：

ZOUTENDYK, JA ^{[1
]}

SMITH, LS ^{[1
]}

SOLI, GA ^{[1
]}

LO, RY ^{[1
]}

机构：

[1] INTEL CORP,SANTA CLARA,CA 95051

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1292 / 1299

页数：8

共 9 条

[1] 2-DIMENSIONAL SIMULATION OF SINGLE EVENT INDUCED BIPOLAR CURRENT IN CMOS STRUCTURES [J].

FU, JS ;

AXNESS, CL ;

WEAVER, HT .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1155-1160

[2]

HSIEH CM, 1983, IEEE T ELECTRON DEV, V30, P686, DOI 10.1109/T-ED.1983.21190

[3] CHARGE COLLECTION IN MULTILAYER STRUCTURES [J].

KNUDSON, AR ;

CAMPBELL, AB ;

SHAPIRO, P ;

STAPOR, WJ ;

WOLICKI, EA ;

PETERSEN, EL ;

DIEHLNAGLE, SE ;

HAUSER, J ;

DRESSENDORFER, PV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1149-1154

[4] SIMULATION OF CHARGE COLLECTION IN A MULTILAYER DEVICE [J].

KRESKOVSKY, JP ;

GRUBIN, HL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4140-4144

[5] CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON [J].

OLDHAM, TR ;

MCLEAN, FB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4493-4500

[6]

ONG DG, 1984, MODERN MOS TECHNOLOG, P280

[7]

PINTO MR, 1985, PISCES IIB SUPPLEMEN

[8]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P133

[9] SINGLE-EVENT UPSET (SEU) MODEL VERIFICATION AND THRESHOLD DETERMINATION USING HEAVY-IONS IN A BIPOLAR STATIC RAM [J].

ZOUTENDYK, JA ;

SMITH, LS ;

SOLI, GA ;

THIEBERGER, P ;

WEGNER, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4164-4169

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