SIMULATION OF CHARGE COLLECTION IN A MULTILAYER DEVICE

[1] 2-DIMENSIONAL SIMULATION OF SINGLE EVENT INDUCED BIPOLAR CURRENT IN CMOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1155 - 1160

[2] NUMERICAL-STUDIES OF CHARGE COLLECTION AND FUNNELING IN SILICON DEVICE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1161 - 1166

[3] GRUBIN HL, SRA R82940001F2 FIN

[4] GRUBIN HL, SRA R849400022 FIN R

[5] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 103 - 105

[6] HSIEH CM, 1983, IEEE T ELECTRON DEV, V30, P686, DOI 10.1109/T-ED.1983.21190

[7] CHARGE COLLECTION IN MULTILAYER STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1149 - 1154

[8] KRESKOVSKY JP, SRA R84940003F FIN R

[9] COLLECTION OF CHARGE ON JUNCTION NODES FROM ION TRACKS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 2024 - 2031

[10] OLDAM TR, 1982, IEEE T NS, V29, P2018

[1] 2-DIMENSIONAL SIMULATION OF SINGLE EVENT INDUCED BIPOLAR CURRENT IN CMOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1155 - 1160

[2] NUMERICAL-STUDIES OF CHARGE COLLECTION AND FUNNELING IN SILICON DEVICE [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1161 - 1166

[3] GRUBIN HL, SRA R82940001F2 FIN

[4] GRUBIN HL, SRA R849400022 FIN R

[5] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 103 - 105

[6] HSIEH CM, 1983, IEEE T ELECTRON DEV, V30, P686, DOI 10.1109/T-ED.1983.21190

[7] CHARGE COLLECTION IN MULTILAYER STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) : 1149 - 1154

[8] KRESKOVSKY JP, SRA R84940003F FIN R

[9] COLLECTION OF CHARGE ON JUNCTION NODES FROM ION TRACKS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) : 2024 - 2031

[10] OLDAM TR, 1982, IEEE T NS, V29, P2018