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NUMERICAL-STUDIES OF CHARGE COLLECTION AND FUNNELING IN SILICON DEVICE
被引:29
作者
:
GRUBIN, HL
论文数:
0
引用数:
0
h-index:
0
GRUBIN, HL
KRESKOVSKY, JP
论文数:
0
引用数:
0
h-index:
0
KRESKOVSKY, JP
WEINBERG, BC
论文数:
0
引用数:
0
h-index:
0
WEINBERG, BC
机构
:
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1984年
/ 31卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1984.4333475
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1161 / 1166
页数:6
相关论文
共 5 条
[1]
A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES
HSIEH, CM
论文数:
0
引用数:
0
h-index:
0
HSIEH, CM
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
MURLEY, PC
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
[J].
ELECTRON DEVICE LETTERS,
1981,
2
(04):
: 103
-
105
[2]
KRESKOVSKY JP, R940002F SCI RES ASS
[3]
Kurata M., 1982, NUMERICAL ANAL SEMIC
[4]
COLLECTION OF CHARGE ON JUNCTION NODES FROM ION TRACKS
MESSENGER, GC
论文数:
0
引用数:
0
h-index:
0
MESSENGER, GC
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1982,
29
(06)
: 2024
-
2031
[5]
CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON
OLDHAM, TR
论文数:
0
引用数:
0
h-index:
0
OLDHAM, TR
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1983,
30
(06)
: 4493
-
4500
←
1
→
共 5 条
[1]
A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES
HSIEH, CM
论文数:
0
引用数:
0
h-index:
0
HSIEH, CM
MURLEY, PC
论文数:
0
引用数:
0
h-index:
0
MURLEY, PC
OBRIEN, RR
论文数:
0
引用数:
0
h-index:
0
OBRIEN, RR
[J].
ELECTRON DEVICE LETTERS,
1981,
2
(04):
: 103
-
105
[2]
KRESKOVSKY JP, R940002F SCI RES ASS
[3]
Kurata M., 1982, NUMERICAL ANAL SEMIC
[4]
COLLECTION OF CHARGE ON JUNCTION NODES FROM ION TRACKS
MESSENGER, GC
论文数:
0
引用数:
0
h-index:
0
MESSENGER, GC
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1982,
29
(06)
: 2024
-
2031
[5]
CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON
OLDHAM, TR
论文数:
0
引用数:
0
h-index:
0
OLDHAM, TR
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1983,
30
(06)
: 4493
-
4500
←
1
→