CHARGE COLLECTION MEASUREMENTS FOR HEAVY-IONS INCIDENT ON N-TYPE AND P-TYPE SILICON

被引：43

作者：

OLDHAM, TR

MCLEAN, FB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4493 / 4500

页数：8

共 16 条

[1]

ADAMS J, 1983, IEEE NUCL S, V30, P4135

[2]

BROPHY JJ, 1966, BASIC ELECTRONICS SC

[3] CHARGE COLLECTION IN TEST STRUCTURES [J].

CAMPBELL, AB ;

KNUDSON, AR ;

SHAPIRO, P ;

PATTERSON, DO ;

SEIBERLING, LE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4486-4492

[4] A FIELD-FUNNELING EFFECT ON THE COLLECTION OF ALPHA-PARTICLE-GENERATED CARRIERS IN SILICON DEVICES [J].

HSIEH, CM ;

MURLEY, PC ;

OBRIEN, RR .

ELECTRON DEVICE LETTERS, 1981, 2 (04) :103-105

[5]

HSIEH CM, 1981, APR P IEEE INT REL P, P38

[6] ALPHA-PARTICLE-INDUCED FIELD AND ENHANCED COLLECTION OF CARRIERS [J].

HU, C .

ELECTRON DEVICE LETTERS, 1982, 3 (02) :31-34

[7]

KOLASINSKI WA, 1980, IEEE T NUCL SCI, V28, P4013

[8]

LINDHARD J, 1963, MAT FYX MEDD VID SEL, V33

[9] ALPHA-PARTICLE-INDUCED SOFT ERRORS IN DYNAMIC MEMORIES [J].

MAY, TC ;

WOODS, MH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (01) :2-9

[10]

MCLEAN FB, 1982, IEEE T NUCL SCI, V29, P2018

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