CHARGE COLLECTION IN TEST STRUCTURES

被引：28

作者：

CAMPBELL, AB

KNUDSON, AR

SHAPIRO, P

PATTERSON, DO

SEIBERLING, LE

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4486 / 4492

页数：7

共 18 条

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[2]

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[6]

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[8] USE OF AN ION MICROBEAM TO STUDY SINGLE EVENT UPSETS IN MICROCIRCUITS [J].

KNUDSON, AR ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4017-4021

[9]

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[10] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

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