Epitaxial phase stabilisation phenomena in rare earth manganites

被引:49
作者
Bosak, AA [1 ]
Kamenev, AA
Graboy, IE
Antonov, SV
Gorbenko, OY
Kaul, AR
Dubourdieu, C
Senateur, JP
Svechnikov, VL
Zandbergen, HW
Holländer, B
机构
[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia
[2] Inst Natl Polytech Grenoble, Mat & Genie Phys Lab, F-38402 St Martin Dheres, France
[3] Delft Univ Technol, Mat Sci Lab, Natl Ctr HREM, NL-2628 AL Delft, Netherlands
[4] Forschungszentrum Julich, ISG1, D-52425 Julich, Germany
关键词
rare-earth manganites; thin films; epitaxial stabilisation; metal-organic chemical vapour deposition (MOCVD);
D O I
10.1016/S0040-6090(01)01501-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using injection, powder-flash and band-flash MOCVD techniques, epitaxial thin films of Nd, Ho, Y, Tint, Dy and Lu manganites were prepared. The formation of high-pressure phase NdMn(7)O(12) as a thin surface layer on Pnma Nd(1-x)MnO(3+delta) (x similar to0.15) in an Nd-deficient system and HoMnO(3), YMnO(3), TmMnO(3) and LuMnO(3) as perovskite phases (known in the bulk only as high-pressure phases) on a LaAlO(3) substrate were observed. The remarkable reduction in the pressure needed for formation of the phases in epitaxial films in comparison with bulk samples is a manifestation of the epitaxial stabilisation discussed in the paper. The details of the crystal and domain structure of the films as observed by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution electron microscopy (HREM) techniques are described. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:149 / 153
页数:5
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