Anisotropy of electrical and optical properties in beta-Ga2O3 single crystals

被引：358

作者：

Ueda, N ^{[1
]}

Hosono, H ^{[1
]}

Waseda, R ^{[1
]}

Kawazoe, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,MAT & STRUCT LAB,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.119693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Anisotropy of electrical and optical properties in beta-Ga2O3 single crystals has been investigated at room temperature. The conductivity and mobility of the degenerate sample along the direction of b and c axes are 38 Omega(-1) cm(-1), 46 cm(2) V-1 s(-1), and 2.2 Omega(-1) cm(-1), 2.6 cm(2) V-1 s(-1), respectively. The absorption edges of the insulating sample for light polarized E//b and E//c were 4.79 and 4.52 eV, respectively. The rate of the band gap widening with increasing carrier concentration was much larger for E//b than E//c. The origin of these properties are discussed by considering the crystal and electronic structure of beta-Ga2O3. (C) 1997 American Institute of Physics.

引用

页码：933 / 935

页数：3

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