Electrical characteristics of amorphous carbon nanotube and effects of contacts

被引:13
作者
Hu, YF
Liang, XL
Chen, Q
Peng, LM [1 ]
Hu, ZD
机构
[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2172237
中图分类号
O59 [应用物理学];
学科分类号
摘要
Amorphous-carbon nanotube (a-CNT) based devices have been fabricated and transport measurements on these devices have been carried out. It was found that the Schottky barrier formed between the metal contact and a-CNT plays a significant role in the transport of a-CNT devices, and electrical characteristics of these devices may be engineered by varying the characteristics of the contact. In particular for asymmetrically contacted a-CNT devices it was demonstrated that the introduction of hydrogen may increase the current by more than 14 times at a positive bias of 3 V.
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页数:3
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