Prominent Thermodynamical Interaction with Surroundings on Nanoscale Memristive Switching of Metal Oxides

被引：35

作者：

Nagashima, Kazuki ^{[1
]}

Yanagida, Takeshi ^{[1
,2
]}

Oka, Keisuke ^{[1
]}

Kanai, Masaki ^{[1
]}

Klamchuen, Annop ^{[1
]}

Rahong, Sakon ^{[1
]}

Meng, Gang ^{[1
]}

Horprathum, Mati ^{[1
,3
]}

Xu, Bo ^{[1
]}

Zhuge, Fuwei ^{[1
]}

He, Yong ^{[1
]}

Park, Bae Ho ^{[4
]}

Kawai, Tomoji ^{[1
,4
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka, Ibaraki 5670047, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[3] Natl Elect & Comp Technol Ctr, Photon Technol Lab, Pathum Thani 12120, Thailand

[4] Konkuk Univ, Div Quantum Phases & Devices, Dept Phys, Seoul 143701, South Korea

来源：

NANO LETTERS | 2012年 / 12卷 / 11期

关键词：

Methristive switching; surrounding effect; planar device; redox; metal oxides; MECHANISMS; DEVICES;

D O I：

10.1021/nl302880a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This study demonstrates the effect of surroundings on a memristive switching at nanoscale. by utilizing an open top planar-type device. NiOx and CoOx planar-type devices. have exhibited a memristive behavior under atmospheric pressure, whereas TiO2-x planar-type devices did not show a memristive switching even under the same surroundings. A memristive behavior: of TiO2-x planar-type devices has emerged when reducing an ambient pressure and/or employing a SiO2 passivation layer. These results reveal that a thermodynamical interaction with surroundings critically . determines the occurrence of memristive Switching via varying a stability of nonstoichiometry. Since this effect tends to be more significant for smaller devices with larger specific surface area, tailoring the surrounding effect by an appropriate passivation will be essential for high density devices.

引用

页码：5684 / 5690

页数：7

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