Electrical characteristics of Ta2O5 thin films deposited by electron beam gun evaporation

被引：13

作者：

Mikhelashvili, V ^{[1
]}

Eisenstein, G ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 18期

关键词：

D O I：

10.1063/1.125166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electrical characteristics of Ta2O5 films deposited by a simple electron beam gun evaporator. We describe thickness-dependent characteristics for films with thicknesses of 7-130 nm. An equivalent SiO2 thickness of 3.5-4.5 nm for films whose leakage current density at an electric field of 10(6) V/cm is lower than 10(-7) A/cm(2) is demonstrated. (C) 1999 American Institute of Physics. [S0003-6951(99)03544-5].

引用

页码：2836 / 2838

页数：3

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