Ta2O5 thin films with exceptionally high dielectric constant

被引：119

作者：

Lin, J ^{[1
]}

Masaaki, N ^{[1
]}

Tsukune, A ^{[1
]}

Yamada, M ^{[1
]}

机构：

[1] Fujitsu Ltd, Semicond Grp, Tech Dev Div, Adv Proc Integrat Dept,Nakahara Ku, Kawasaki, Kanagawa 21188, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have achieved tantalum pentoxide (Ta2O5) thin films with extremely highly predominant < 001 > orientation. The Ta2O5 thin films have an exceptionally high dielectric constant of 90-110, and capacitors using these Ta2O5 films as a dielectric layer show the high capacitance and low leakage current meeting the requirements for the new generation of memory devices. (C) 1999 American Institute of Physics. [S0003-6951(99)03516-0].

引用

页码：2370 / 2372

页数：3

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