EFFECTS OF ADDITIVE ELEMENTS ON ELECTRICAL-PROPERTIES OF TANTALUM OXIDE-FILMS

被引：78

作者：

FUJIKAWA, H

TAGA, Y

机构：

[1] Toyota Central Research and Development Laboratories, Inc., Aichi-gun, Aichi-ken 480-11

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.356227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ta2O5-based composite films prepared by magnetron sputtering have been investigated with respect to their dielectric properties. As additive third oxides, Y2O3 and WO3 were found to be effective materials for improving insulating properties. In these composite films, the dielectric constant remained unchanged. The maximum storage charge of the composite films was twice that of Ta2O5 films. The main reason for improving the insulating properties could be explained by the charge compensation of excess oxygen by these additive oxides.

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页码：2538 / 2544

页数：7

相关论文

共 22 条

[1] CONDUCTION MECHANISMS IN SPUTTERED TA2O5 ON SI WITH AN INTERFACIAL SIO2 LAYER [J].

BANERJEE, S ;

SHEN, B ;

CHEN, I ;

BOHLMAN, J ;

BROWN, G ;

DOERING, R .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) :1140-1146

[2] LEAKAGE-CURRENT REDUCTION IN THIN TA2O5 FILMS FOR HIGH-DENSITY VLSI MEMORIES [J].

HASHIMOTO, C ;

OIKAWA, H ;

HONMA, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (01) :14-18

[3] EFFECT OF OZONE ANNEALING ON THE DIELECTRIC-PROPERTIES OF TANTALUM OXIDE THIN-FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

ISOBE, C ;

SAITOH, M .

APPLIED PHYSICS LETTERS, 1990, 56 (10) :907-909

[4]

KIMIRA S, 1983, J ELECTROCHEM SOC, V130, P2414

[5] AMORPHOUS-SILICON THIN-FILM TRANSISTORS EMPLOYING PHOTOPROCESSED TANTALUM OXIDE-FILMS AS GATE INSULATORS [J].

MATSUI, M ;

NAGAYOSHI, H ;

MUTO, G ;

TANIMOTO, S ;

KUROIWA, K ;

TARUI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01) :62-66

[6]

MATUI M, 1988, JPN J APPL PHYS, V27, P506

[7] ELECTRON TRANSPORT MECHANISMS IN THIN INSULATING FILMS [J].

MEAD, CA .

PHYSICAL REVIEW, 1962, 128 (05) :2088-&

[8]

NOMURA K, 1991, J ELECTROCHEM SOC, V138, P3701, DOI 10.1149/1.2085483

[9] ELECTRON TRAP STUDIES IN AL-TA-O/CDSE THIN-FILM TRANSISTORS USING A HOT-ELECTRON INJECTION METHOD [J].

NOMURA, K ;

OGAWA, H .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) :786-790

[10] SOME PROPERTIES OF CRYSTALLIZED TANTALUM PENTOXIDE THIN-FILMS ON SILICON [J].

OEHRLEIN, GS ;

DHEURLE, FM ;

REISMAN, A .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3715-3725