CONDUCTION MECHANISMS IN SPUTTERED TA2O5 ON SI WITH AN INTERFACIAL SIO2 LAYER

被引：77

作者：

BANERJEE, S ^{[1
]}

SHEN, B ^{[1
]}

CHEN, I ^{[1
]}

BOHLMAN, J ^{[1
]}

BROWN, G ^{[1
]}

DOERING, R ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.343052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1140 / 1146

页数：7

相关论文

共 14 条

[1] ELECTRICAL AND CHARGE STORAGE CHARACTERISTICS OF TANTALUM OXIDE-SILICON DIOXIDE DEVICE
ANGLE, RL
TALLEY, HE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1277 - 1283
[2] ELECTRON TRANSPORT MECHANISMS IN THIN INSULATING FILMS
MEAD, CA
[J]. PHYSICAL REVIEW, 1962, 128 (05): : 2088 - &
[3] NISHIOKA Y, 1985, IEEE IEDM, V31, P42
[4] ODWYER JJ, 1973, THEORY ELECTRICAL CO
[5] ELECTRICAL-PROPERTIES OF AMORPHOUS TANTALUM PENTOXIDE THIN-FILMS ON SILICON
OEHRLEIN, GS
REISMAN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6502 - 6508
[6] SOME PROPERTIES OF CRYSTALLIZED TANTALUM PENTOXIDE THIN-FILMS ON SILICON
OEHRLEIN, GS
DHEURLE, FM
REISMAN, A
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3715 - 3725
[7] DIELECTRIC PROPERTIES OF TA2O5 THIN FILMS
PULFREY, DL
WILCOX, PS
YOUNG, L
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 3891 - &
[8] SAITOH M, 1986, IEEE IEDM, V32, P680
[9] FIELD-DEPENDENT PHOTOINJECTION EFFICIENCY OF CARRIERS IN AMORPHOUS SE FILMS
SEKI, H
[J]. PHYSICAL REVIEW B, 1970, 2 (12): : 4877 - &
[10] EFFECTS OF SURFACE OXIDE ON LEAKAGE CURRENT OF MAGNETRON-SPUTTERED TA2O5 ON SI
SEKI, S
UNAGAMI, T
KOGURE, O
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (12) : 3054 - 3055