AMORPHOUS-SILICON THIN-FILM TRANSISTORS EMPLOYING PHOTOPROCESSED TANTALUM OXIDE-FILMS AS GATE INSULATORS

被引:44
作者
MATSUI, M
NAGAYOSHI, H
MUTO, G
TANIMOTO, S
KUROIWA, K
TARUI, Y
机构
[1] Division of Electronic and Information Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 01期
关键词
A-Si:H thin-film transistor; Double layer gate insulator; Field effect mobility; Internal stress; Photo-CVD; Subthreshold; Tantalum oxide; Voltage swing;
D O I
10.1143/JJAP.29.62
中图分类号
O59 [应用物理学];
学科分类号
摘要
Amorphous silicon thin-film transistors (a-Si:H TFT's) with photoprocessed TaOx/photo-CVD SiNxdouble layer gate insulator have been fabricated. The usefulness of photoprocessed TaOxfilm as a gate insulator and the reason for improvement in TFT characteristics thereby are discussed. There is a correlation among TFT characteristics, a-Si:H/SiNxinterface properties and stress in the gate insulator. Better TFT characteristics are obtained for higher compressive stress in the gate insulator due to better interface properties. The photoprocessed TaOxfilm plays a role in changing the stress and consequently improves TFT characteristics. Annealing of TaOxfilm in the presence of both UV irradiation and an oxygen ambient after photo-CVD deposition also improves the stability of TFT characteristics. © 1990 IOP Publishing Ltd.
引用
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页码:62 / 66
页数:5
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