THE INTERFACE AND THE FIELD-EFFECT IN THIN-FILM TRANSISTORS

被引：8

作者：

CHEN, I

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 02期

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D O I：

10.1063/1.333978

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：396 / 400

页数：5

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[1] IV CHARACTERISTICS OF THIN-FILM TRANSISTORS
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[2] ANALYSIS OF LASER ANNEALED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
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[4] THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS
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[6] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE
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[7] THEORY AND INTERPRETATION OF FIELD-EFFECT CONDUCTANCE EXPERIMENT IN AMORPHOUS SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2662 - 2669
[8] AMORPHOUS SILICON THIN-FILM TRANSISTOR - THEORY AND EXPERIMENT
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[J]. SOLID-STATE ELECTRONICS, 1976, 19 (08) : 721 - 729
[9] ANALYSIS OF FIELD-EFFECT-CONDUCTANCE MEASUREMENTS ON AMORPHOUS-SEMICONDUCTORS
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01): : 93 - 103
[10] THE EFFECT OF SURFACE-STATES AND FIXED CHARGE ON THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3244 - 3248