THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS

被引：63

作者：

KISHIDA, S

NARUKE, Y

UCHIDA, Y

MATSUMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 03期

关键词：

D O I：

10.1143/JJAP.22.511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：511 / 517

页数：7

共 7 条

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GOODMAN, NB
FRITZSCHE, H
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[3] AMORPHOUS-SILICON SILICON-OXYNITRIDE FIELD-EFFECT TRANSISTORS
ISHIBASHI, K
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[4] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION
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[5] AMORPHOUS SILICON THIN-FILM TRANSISTOR - THEORY AND EXPERIMENT
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[6] ANALYSIS OF FIELD-EFFECT-CONDUCTANCE MEASUREMENTS ON AMORPHOUS-SEMICONDUCTORS
POWELL, MJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01): : 93 - 103
[7] INFLUENCE OF GAP STATES ON BASIC CHARACTERISTICS OF A-SI-H THIN-FILM TRANSISTORS
SUZUKI, T
HIROSE, M
OSAKA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (05): : L315 - L317