AMORPHOUS SILICON THIN-FILM TRANSISTOR - THEORY AND EXPERIMENT

被引：45

作者：

NEUDECK, GW

MALHOTRA, AK

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

[2] BUCKNELL UNIV,DEPT ELECT ENGN,LEWISBURG,PA 17837

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 08期

关键词：

D O I：

10.1016/0038-1101(76)90149-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：721 / 729

页数：9

共 10 条

[1]

Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[2] SIMPLE BAND MODEL FOR AMORPHOUS SEMICONDUCTING ALLOYS [J].

COHEN, MH ;

FRITZSCHE, H ;

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1969, 22 (20) :1065-+

[3] TFT CHARACTERISTICS WITH DISTRIBUTED TRAPS IN SEMICONDUCTOR [J].

DEMASSA, TA ;

REFIOGLU, HI .

SOLID-STATE ELECTRONICS, 1975, 18 (04) :315-319

[4] EFFECTS OF HYDROGEN CONTAMINATION ON LOCALIZED STATES IN AMORPHOUS SILICON [J].

MALHOTRA, AK ;

NEUDECK, GW .

APPLIED PHYSICS LETTERS, 1976, 28 (01) :47-49

[5]

MALHOTRA AK, 1974, APPL PHYS LETT, V24, P29

[6] THEORY AND INTERPRETATION OF FIELD-EFFECT CONDUCTANCE EXPERIMENT IN AMORPHOUS SILICON [J].

NEUDECK, GW ;

MALHOTRA, AK .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2662-2669

[7] FIELD-EFFECT CONDUCTANCE MODULATION IN VACUUM-EVAPORATED AMORPHOUS SILICON FILMS [J].

NEUDECK, GW ;

MALHOTRA, AK .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :239-247

[8]

Tickle A. C., 1969, THIN FILM TRANSISTOR

[9] THEORETICAL INFLUENCE OF SURFACE STATES AND BULK TRAPS ON THIN-FILM TRANSISTOR CHARACTERISTICS [J].

VANCALSTER, A ;

PAUWELS, HJ .

SOLID-STATE ELECTRONICS, 1975, 18 (7-8) :691-698

[10] TFT - NEW THIN-FILM TRANSISTOR [J].

WEIMER, PK .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (06) :1462-&

← 1 →