THE EFFECT OF SURFACE-STATES AND FIXED CHARGE ON THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON

被引：57

作者：

POWELL, MJ

PRITCHARD, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3244 / 3248

页数：5

共 10 条

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GOODMAN, NB
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165
[3] A SIMPLE SCHEME FOR EVALUATING FIELD-EFFECT DATA
GRUNEWALD, M
THOMAS, P
WURTZ, D
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (02): : K139 - K143
[4] MADAN A, 1977, 7TH P INT C AM LIQ S, P377
[5] MADAN A, 1976, J NONCRYST SOLIDS, V20, P238
[6] ANNEALING AND LIGHT-INDUCED-CHANGES IN THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON
POWELL, MJ
EASTON, BC
NICHOLLS, DH
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5068 - 5078
[7] ANALYSIS OF FIELD-EFFECT-CONDUCTANCE MEASUREMENTS ON AMORPHOUS-SEMICONDUCTORS
POWELL, MJ
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01): : 93 - 103
[8] PROTHERO A, 1976, MODERN NUMERICAL MET, P152
[9] DUAL-GATE A-SI-H THIN-FILM TRANSISTORS
TUAN, HC
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LUJAN, RA
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 357 - 359
[10] AN IMPROVED FIELD-EFFECT ANALYSIS FOR THE DETERMINATION OF THE PSEUDOGAP-STATE DENSITY IN AMORPHOUS-SEMICONDUCTORS
WEISFIELD, RL
ANDERSON, DA
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (01): : 83 - 93

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