DUAL-GATE A-SI-H THIN-FILM TRANSISTORS

[1] AST DG, 1981, DEVICE RES C

[2] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 754 - 755

[3] KAWAI S, 1982, SID 82, P42

[4] Knights J. C., 1979, JPN J APPL PHYS, V18, P101

[5] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181

[6] LECONTELLEC M, 1982, SID 82 DIGEST, P44

[7] HIGH-PERFORMANCE AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6443 - 6444

[8] OKUBO Y, 1982, SID 82 DIGEST, P40

[9] AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 794 - 796

[10] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (02): : 83 - 86

[1] AST DG, 1981, DEVICE RES C

[2] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 754 - 755

[3] KAWAI S, 1982, SID 82, P42

[4] Knights J. C., 1979, JPN J APPL PHYS, V18, P101

[5] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181

[6] LECONTELLEC M, 1982, SID 82 DIGEST, P44

[7] HIGH-PERFORMANCE AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6443 - 6444

[8] OKUBO Y, 1982, SID 82 DIGEST, P40

[9] AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 794 - 796

[10] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (02): : 83 - 86