AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS

[1] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[2] 6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 995 - 1001

[3] DETERMINATION OF THE DENSITY OF STATES OF A-SI-H USING THE FIELD-EFFECT [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 599 - 604

[4] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 754 - 755

[5] LECORDIER C, 1979, ANN SOC ENTOMOL FR, V15, P179

[6] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257

[7] MADAN A, 1977, P INT C AMORPHOUS LI, P377

[8] THEORY AND INTERPRETATION OF FIELD-EFFECT CONDUCTANCE EXPERIMENT IN AMORPHOUS SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2662 - 2669

[9] AMORPHOUS SILICON THIN-FILM TRANSISTOR - THEORY AND EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1976, 19 (08) : 721 - 729

[10] ANALYSIS OF FIELD-EFFECT-CONDUCTANCE MEASUREMENTS ON AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01): : 93 - 103

[1] LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1972, 15 (03) : 293 - +

[2] 6X6 INCH 20 LINES-PER-INCH LIQUID-CRYSTAL DISPLAY PANEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 995 - 1001

[3] DETERMINATION OF THE DENSITY OF STATES OF A-SI-H USING THE FIELD-EFFECT [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 599 - 604

[4] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 754 - 755

[5] LECORDIER C, 1979, ANN SOC ENTOMOL FR, V15, P179

[6] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) : 239 - 257

[7] MADAN A, 1977, P INT C AMORPHOUS LI, P377

[8] THEORY AND INTERPRETATION OF FIELD-EFFECT CONDUCTANCE EXPERIMENT IN AMORPHOUS SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) : 2662 - 2669

[9] AMORPHOUS SILICON THIN-FILM TRANSISTOR - THEORY AND EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1976, 19 (08) : 721 - 729

[10] ANALYSIS OF FIELD-EFFECT-CONDUCTANCE MEASUREMENTS ON AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01): : 93 - 103