NEW ANALYSIS OF FIELD-EFFECT CONDUCTANCE IN HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS

被引：6

作者：

LEE, S

CHEN, I

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 06期

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D O I：

10.1063/1.93594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：558 / 560

页数：3

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