Ultrathin Ta2O5 film capacitor with Ru bottom electrode

被引：39

作者：

Aoyama, T ^{[1
]}

Yamazaki, S ^{[1
]}

Imai, K ^{[1
]}

机构：

[1] Toshiba Corp, Microelect Engn Lab, USLI Proc Engn Lab, Yokohama, Kanagawa 2358522, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 08期

关键词：

D O I：

10.1149/1.1838745

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The characteristics of the ultrathin Ta2O5 film capacitors with Ru bottom electrodes have been investigated. Ru films are deposited on n(+)-Si by sputtering in 10% O-2/Ar ambient, for the bottom electrode, and Ta2O5 films are deposited by chemical vapor deposition using Ta(OC2H5)(5) and O-2. By O-2 plasma treatment at 400 degrees C after N-2 thermal treatment at 700 degrees C, excellent properties, are obtained such that the effective SiO2 film thickness is 0.68 nm for 6 nm thick Ta2O5 film and the leakage current is less than 1 x 10(-8) A/cm(2) between the range of -2.1 and +1.8 V. The Ta2O5 film with a Ru bottom electrode is one of the most suitable structures for Gbit dynamic random access memory capacitors.

引用

页码：2961 / 2964

页数：4

共 21 条

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