Interfacial layers between Si and Ru films deposited by sputtering in Ar/O2 mixture ambient

被引：6

作者：

Aoyama, T

Murakoshi, A

Koike, M

Takeno, S

Imai, K

机构：

[1] Toshiba Corp, Microelect Engn Lab, ULSI Proc Engn Lab, Isogo Ku, Yokohama, Kanagawa 235, Japan

[2] Toshiba Corp, Ctr Res & Dev, Environm Engn Lab, Isogo Ku, Yokohama, Kanagawa 235, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 2B期

关键词：

Ru; Si; O; interfacial layers; (Ba; Sr)TiO3; capacitor; electrode; amorphous layer; crystalline layer;

D O I：

10.1143/JJAP.37.L242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ru films are fabricated by de magnetron sputtering in Ar/O-2 ambient for the bottom electrode of Ba0.5Sr0.5TiO3 thin him capacitors. The Ru films deposited on Si in ambient of 10% O-2 do not form Ru2Si3 following thermal process even at 700 degrees C. It becomes clear that there exist very thin amorphous and crystalline layers composed of Ru, Si and O between the Ru films and Si. A contact resistance of 1.6x10(-7)Ohm cm(2) between Ru and n(+)-Si is obtained after annealing at 700 degrees C. The effective SiO2 film thickness of 0.42 nm is obtained for 42 nm actual Ba0.5Sr0.5TiO3 film thickness and the leakage current is less than 1 x 10(-8) A/cm(2) in the range between -1.5 V and +1.8 V for Ru/Ba0.5Sr0.5TiO3/Ru/n(+)-Si capacitor.

引用

页码：L242 / L244

页数：3

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