REACTIVE ION ETCHING OF RUO2, THIN-FILMS USING THE GAS-MIXTURE O-2 CF3CFH2

被引：43

作者：

PAN, W ^{[1
]}

DESU, SB ^{[1
]}

机构：

[1] VIRGINIA POLYTECH INST & STATE UNIV,DEPT MAT SCI & ENGN,THIN FILMS LAB,BLACKSBURG,VA 24061

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3208 / 3213

页数：6

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