Time, energy, and spatially resolved TEM investigations of defects in InGaN

被引：14

作者：

Jinschek, JR ^{[1
]}

Kislelowski, C ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, NCEM, Berkeley, CA 94720 USA

来源：

PHYSICA B-CONDENSED MATTER | 2006年 / 376卷

关键词：

electron microscopy; EELS; InGaN; band gap; strain;

D O I：

10.1016/j.physb.2005.12.136

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A novel sample preparation technique is reported to fabricate electron transparent samples from devices utilizing a FIB process with a successive wet etching step. The high quality of the obtained samples allows for band gap-and chemical composition measurements of InxGa1-xN quantum wells where electron beam induced damage can be controlled and shown to be negligible. The results reveal indium enrichment in nanoclusters and defects that cause fluctuations of the band gap energy and can be measured by low loss Electron Energy Spectroscopy with nm resolution. Comparing our time, energy, and spatially resolved measurements of band gap energies, chemical composition, and their related fluctuations with literature data, we find quantitative agreement if the band gap energy of InN is 1.5-2 eV. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：536 / 539

页数：4

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