Growth and structural properties of indium sesquitelluride (In2Te3) thin films

被引:37
作者
Desai, RR
Lakshminarayana, D
Patel, PB
Patel, PK
Panchal, CJ [1 ]
机构
[1] Maharaja Sayajirao Univ Baroda, Fac Technol & Engn, Dept Appl Phys, Vadodara 390001, Gujarat, India
[2] Sardar Patel Univ, Dept Chem, Vallabh Vidyanagar 388120, Gujarat, India
[3] Sardar Patel Univ, Dept Elect, Vallabh Vidyanagar 388120, Gujarat, India
关键词
indium sesquitelluride; thin films; flash evaporation; structural properties;
D O I
10.1016/j.matchemphys.2005.05.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Indium sesquitelluride (In2Te3) compound was synthesized by mixing and melting the pure individual elements in stoichiometric proportions. The synthesized compound was utilized for the deposition of In2Te3 thin films on glass and freshly cleaved NaCl substrates using flash evaporation technique. The structure of In2Te3 thin films has been studied on the glass substrates by X-ray diffraction technique and on the cleavage faces of NaCl by electron diffraction technique. It was observed that the deposition from an ordered (X-phase compound results in polycrystalline films on glass substrate at 473 K which are predominant alpha-phase and random beta-phase compounds resulting in single crystal films on NaCl substrate at 523 K. Effect of source and substrate temperature on the composition of In2Te3 was also studied. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:308 / 314
页数:7
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