Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes

被引：7

作者：

Wernersson, LE ^{[1
]}

Borgström, M ^{[1
]}

Gustafson, B ^{[1
]}

Gustafsson, A ^{[1
]}

Pietzonka, I ^{[1
]}

Pistol, ME ^{[1
]}

Sass, T ^{[1
]}

Seifert, W ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 10期

关键词：

D O I：

10.1063/1.1459113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied GaP/GaAs/GaP and GaAsxP1-x/GaAs/GaAsxP1-x double-barrier resonant tunnelling diodes grown by metalorganic vapor phase epitaxy. We find that GaP tensile strained barriers in GaP/GaAs/GaP diodes may be grown with a barrier thickness below the critical thickness of about 12 monolayers. However, a corrugation of the strained barrier is observed by transmission electron microscopy. This variation may explain the low peak-to-valley ratio of the diodes (about 2). In contrast, GaAsxP1-x/GaAs/GaAsxP1-x resonant tunnelling diodes have been grown with a homogeneous thickness of the barriers, consequently showing a substantially improved electrical performance compared to the GaP diodes with peak-to-valley ratios >5. (C) 2002 American Institute of Physics.

引用

页码：1841 / 1843

页数：3

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