Band structures and optical spectra of InN polymorphs:: Influence of quasiparticle and excitonic effects -: art. no. 205106

被引:111
作者
Furthmüller, J [1 ]
Hahn, PH [1 ]
Fuchs, F [1 ]
Bechstedt, F [1 ]
机构
[1] Univ Jena, Inst Festkorpertheorie & Opt, D-07743 Jena, Germany
关键词
D O I
10.1103/PhysRevB.72.205106
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present ab initio calculations of the electronic structure and the optical properties of InN crystallizing in wurtzite, zinc-blende, and rocksalt structures. They are based on well converged atomic geometries including the effect of the In 4d electrons. The quasiparticle aspect is described in the framework of a GW approximation. The opposite influence of quasiparticle effects and the pd repulsion is demonstrated for the band structures. The pecularities of the band structures such as the small gap of the 2H and 3C polymorphs and their large electron affinity are discussed. The frequency dependence of the dielectric functions is explained in terms of nonparabolic bands and high-energy optical transitions at critical points. Excitonic effects drastically influence the optical absorption by an overall redshift of the entire spectrum and a redistribution of oscillator strengths. The results are critically discussed in the light of recent experiments.
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页数:14
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共 98 条
  • [1] Nonlocality and many-body effects in the optical properties of semiconductors
    Adolph, B
    Gavrilenko, VI
    Tenelsen, K
    Bechstedt, F
    DelSole, R
    [J]. PHYSICAL REVIEW B, 1996, 53 (15): : 9797 - 9808
  • [2] Optical properties of semiconductors using projector-augmented waves -: art. no. 125108
    Adolph, B
    Furthmüller, J
    Bechstedt, F
    [J]. PHYSICAL REVIEW B, 2001, 63 (12)
  • [3] Ab initio calculation of excitonic effects in the optical spectra of semiconductors
    Albrecht, S
    Reining, L
    Del Sole, R
    Onida, G
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (20) : 4510 - 4513
  • [4] Predictions of electronic, structural, and elastic properties of cubic InN
    Bagayoko, D
    Franklin, L
    Zhao, GL
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (08) : 4297 - 4301
  • [5] Comment on "Mie resonances, infrared emission, and the band gap of InN" -: art. no. 269701
    Bechstedt, F
    Furthmüller, J
    Ambacher, O
    Goldhahn, R
    [J]. PHYSICAL REVIEW LETTERS, 2004, 93 (26) : 269701 - 1
  • [6] ANALYTICAL TREATMENT OF BAND-GAP UNDERESTIMATES IN THE LOCAL-DENSITY APPROXIMATION
    BECHSTEDT, F
    DELSOLE, R
    [J]. PHYSICAL REVIEW B, 1988, 38 (11): : 7710 - 7716
  • [7] Energy gap and optical properties of InxGal1-xN
    Bechstedt, F
    Furthmüller, J
    Ferhat, M
    Teles, LK
    Scolfaro, LMR
    Leite, JR
    Davydov, VY
    Ambacher, O
    Goldhahn, R
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (03): : 628 - 633
  • [8] Do we know the fundamental energy gap of InN?
    Bechstedt, F
    Furthmüller, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) : 315 - 319
  • [9] QUASI-PARTICLE CORRECTIONS FOR ENERGY GAPS IN SEMICONDUCTORS
    BECHSTEDT, F
    [J]. FESTKORPERPROBLEME - ADVANCES IN SOLID STATE PHYSICS 32, 1992, 32 : 161 - 177
  • [10] BECHSTEDT F, 2002, LOW DIMENSIONAL NITR, P11