Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to microcrystalline silicon

被引：203

作者：

Yue, GZ

Lorentzen, JD

Lin, J

Han, DX ^{[1
]}

Wang, Q

机构：

[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.124426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios. We observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the a- to mu c-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3; and (c) as the H ratio increases, the 1.3 eV PL fades away and the low energy PL dominates. Meanwhile, a redshift of the peak position, a decrease of the intensity, and a narrower bandwidth for the low energy PL are also observed. The low energy PL is explained by band-tail radiative transitions from two types of grain boundaries. (C) 1999 American Institute of Physics. [S0003-6951(99)02727-8].

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页码：492 / 494

页数：3

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