MBE growth of novel MgSe/ZnSeTe: NII-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodes

被引：7

作者：

Nomura, I ^{[1
]}

Shinozaki, W ^{[1
]}

Hattori, H ^{[1
]}

Sano, T ^{[1
]}

Che, SB ^{[1
]}

Shimbo, H ^{[1
]}

Kikuchi, A ^{[1
]}

Shimomura, K ^{[1
]}

Kishino, K ^{[1
]}

机构：

[1] Sophia Univ, Dept Elect & Elect Engn, Chiyoda Ku, Tokyo 1028554, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

基金：

日本学术振兴会;

关键词：

MgSe ZnSeTe superlattice; quasi-quaternary; II-VI compound; InP substrate; molecular beam epitaxy; RF-radical nitrogen;

D O I：

10.1016/S0022-0248(98)01504-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Novel MgSe/ZnSeTe II-VI compound superlattice quasi-quaternaries (SL-QQs) were grown on InP substrates by molecular beam epitaxy with p-type doping using a RF-radical nitrogen source. The SL-QQs with various equivalent Mg compositions (x(Mg)) were prepared by changing the MgSe layer composition in the superlattice. Thf photoluminescence peak energy at 15 K increased from 2.11 to 2.68 eV with increasing x(Mg) from 0 to 0.76. A hole concentration over 2 x 10(18) cm(-3) was obtained for x(Mg) of 0.14, and the doping level monotonically decreased with increasing x(Mg). By changing the doping process, the doping property was improved, and a hole concentration of about 3 x 10(17) cm(-3) was realized even for x(Mg) of 0.4. ZnCdSe/MgZnCdSe(Te) light emitting diodes were fabricated on InP substrates using MgSe/ZnSeTe SL-QQs as p-side cladding layers. Yellow light emissions around 577 nm were observed under a pulsed current injection at 77 K. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：954 / 956

页数：3

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