EPITAXIAL-GROWTH OF P-TYPE ZNMGSSE

被引：75

作者：

OKUYAMA, H ^{[1
]}

KISHITA, Y ^{[1
]}

MIYAJIMA, T ^{[1
]}

ISHIBASHI, A ^{[1
]}

AKIMOTO, K ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.110991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-doped p-type ZnMgSSe was grown by molecular beam epitaxy. Nitrogen was induced by electron cyclotron resonance plasma. The maximum net acceptor concentration (N-A-N-D) and the activation energy of the nitrogen acceptor (E(N)) depend on the band-gap energy of ZnMgSSe. With increasing band-gap energy, the maximum N-A-N-D is decreased and EN is increased. The maximum N-A-N-D and the E(N) Of ZnMgSSe with a band-gap energy of 3.05 eV at 77 K are 2.5X10(16) cm(-3) 140 meV, respectively.

引用

页码：904 / 906

页数：3

共 8 条

[1] TRANSPORT STUDY OF ZNSE-N EMPLOYING ZN(SE, TE) GRADED CONTACTS [J].