Multilayer-array growth of SiGeC alloys on Si(001)

被引：9

作者：

LeThanh, V

Calmes, C

Zheng, Y

Bouchier, D

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] Univ Paris 06, Lab Mineral Cristallog, CNRS, UMR 7590, F-75005 Paris, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.1428631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of SiGeC alloys on Si(001) in an ultrahigh vacuum chemical-vapor deposition system was investigated by means of in situ reflection high-energy electron diffraction, transmission electron microscopy, and high resolution x-ray diffraction. It is shown that when the total amount of deposited carbon exceeds a value of about 1.5%, the grown layers contain a high density of stacking faults and/or microtwins. However, such defects are found to be formed only after the deposition of a certain thickness, whose value depends on the deposited carbon amount. By realizing SiGeC/Si multilayer arrays, we show that defect-free SiGeC films with a substitutional carbon content up to 3.3% can be achieved. (C) 2002 American Institute of Physics.

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页码：43 / 45

页数：3

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