Dependence of substitutional C incorporation on Ge content for Si1-x-yGexCy crystals grown by ultrahigh vacuum chemical vapor deposition

被引：25

作者：

Kanzawa, Y ^{[1
]}

Nozawa, K ^{[1
]}

Saitoh, T ^{[1
]}

Kubo, M ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Osaka 5708501, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 24期

关键词：

D O I：

10.1063/1.1332111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si1-x-yGexCy crystals were grown by ultrahigh vacuum chemical vapor deposition (UHV-CVD) using Si2H6, GeH4, and SiH3CH3 as source gases. Although the total C content in the grown crystals increased with increasing the partial pressure of SiH3CH3 gas, the substitutional C content saturated at a certain value. The maximum substitutional C content was found to change depending on the Ge content. As the Ge content was increased from 13 to 35 at. %, the maximum substitutional C content linearly decreased from 2.0 to 0.8 at. %. These results clearly demonstrate that the existence of Ge atoms prevents the substitutional incorporation of C atoms in Si1-x-yGexCy growth by CVD. (C) 2000 American Institute of Physics. [S0003-6951(00)05550-9].

引用

页码：3962 / 3964

页数：3

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