Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers

被引：39

作者：

Hader, J ^{[1
]}

Bossert, D

Stohs, J

Chow, WW

Koch, SW

Moloney, JV

机构：

[1] Univ Arizona, Arizona Ctr Math Sci, Tucson, AZ 85721 USA

[2] USAF, Phillips Lab, Kirtland AFB, NM 87117 USA

[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[4] Sandia Natl Labs, Albuquerque, NM 87185 USA

[5] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[6] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The linewidth enhancement factor in single quantum-well graded index separate confinement heterostructure semiconductor lasers is investigated theoretically and experimentally. For thin wells, a small linewidth enhancement factor is obtained which clamps with increasing carrier density, in contrast to the monotonous increase observed for thicker wells. Microscopic many-body calculations reproduce the experimental observations attributing the clamping to excitation dependent gain shifts and the influence of the population of off-resonant states on the refractive index. (C) 1999 American Institute of Physics. [S0003-6951(99)04016-4].

引用

页码：2277 / 2279

页数：3

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