Gain, refractive index, and alpha-parameter in InGaAs-GaAs SQW broad-area lasers

被引：48

作者：

Bossert, DJ ^{[1
]}

Gallant, D ^{[1
]}

机构：

[1] ROCKWELL POWER SYST CO,KIRTLAND AFB,NM 87185

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 03期

关键词：

D O I：

10.1109/68.481104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gain, refractive index, and the linewidth enhancement factor, or alpha-parameter, are measured in broad-area InGaAs-GaAs single-quantum-well semiconductor lasers using below-threshold amplified spontaneous emission spectra and a far-field filtering technique, The alpha parameter is shown to increase dramatically with increasing carrier density and wavelength, Modes propagating in the transparent substrate of the lasers are shown to have a significant influence on the measured value of alpha.

引用

页码：322 / 324

页数：3

共 18 条

[1]

DENTE GC, 1995, P SOC PHOTO-OPT INS, V2382, P165, DOI 10.1117/12.208445

[2]

ELISEEV PG, 1994, LASER PHYS, V4, P485

[3]

ELISEEV PG, 1994, SPIE, V2146, P185

[4] DEPENDENCE OF LINEWIDTH ENHANCEMENT FACTOR-ALPHA ON WAVE-GUIDE STRUCTURE IN SEMICONDUCTOR-LASERS [J].