THE EFFECT OF LATERAL LEAKAGE CURRENT ON THE EXPERIMENTAL GAIN CURRENT-DENSITY CURVE IN QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS

被引:37
作者
HU, SY
YOUNG, DB
GOSSARD, AC
COLDREN, LA
机构
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara
关键词
D O I
10.1109/3.328603
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We stress the importance of considering the effect of lateral leakage current on the material gain/current-density characteristics measured from ridge-waveguide diode lasers. It is found that the inclusion of lateral leakage current is crucial to obtaining a self-consistent result. An experimental demonstration has been performed on an In0.2Ga0.8As/AlGaAs strained single quantum-well laser sample, from which a gain curve with transparency current density of 53.8 A/cm2 was obtained. By using devices of different geometries, the variation of leakage currents is measured and the accuracy of the resultant gain curves is discussed.
引用
收藏
页码:2245 / 2250
页数:6
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