LOW-THRESHOLD INGAAS/GAAS STRAINED LAYER SINGLE QUANTUM-WELL LASERS WITH SIMPLE RIDGE WAVE-GUIDE STRUCTURE

被引：9

作者：

CHAO, CP

HU, SY

LAW, KK

YOUNG, B

MERZ, JL

GOSSARD, AC

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 11期

关键词：

D O I：

10.1063/1.347473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double heterostructure InGaAs-GaAs strained-layer single quantum well ridge waveguide lasers grown by molecular beam epitaxy were fabricated by using in situ laser monitored reactive ion etching to form the ridges. Continuous-wave threshold current as low as 3.5 mA was obtained on a ridge laser diode of 3.3-mu-m wide and 215-mu-m long having cleaved mirrors. The lasing wavelength is at 0.988-mu-m and the measured differential external quantum efficiency is 61%.

引用

页码：7892 / 7894

页数：3

共 16 条

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