SUBMILLIAMP THRESHOLD INGAAS-GAAS STRAINED LAYER QUANTUM-WELL LASER

被引：42

作者：

CHEN, TR ^{[1
]}

ENG, L ^{[1
]}

ZHAO, B ^{[1
]}

ZHUANG, YH ^{[1
]}

SANDERS, S ^{[1
]}

MORKOC, H ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,DEPT APPL PHYS,PASADENA,CA 91125

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/3.59657

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser (L = 425 µm) and 0.75 mA for a coated laser (R ç 0.9, L = 198 µm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA). © 1990 IEEE

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页码：1183 / 1190

页数：8

相关论文

共 24 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] HIGH-EFFICIENCY CARRIER COLLECTION AND STIMULATED-EMISSION IN THIN (50 A) PSEUDOMORPHIC INXGA1-XAS QUANTUM-WELLS [J].

ANDERSON, NG ;

LO, YC ;

KOLBAS, RM .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :758-760

[3] STIMULATED-EMISSION IN STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURES [J].

CAMRAS, MD ;

BROWN, JM ;

HOLONYAK, N ;

NIXON, MA ;

KALISKI, RW ;

LUDOWISE, MJ ;

DIETZE, WT ;

LEWIS, CR .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6183-6189

[4]

CASEY HC, 1978, HETEROSTRUCTURE LA A

[5]

CHEN TR, UNPUB APPLICATION DI

[6] THEORETICAL GAIN OF STRAINED-LAYER SEMICONDUCTOR-LASERS IN THE LARGE STRAIN REGIME [J].

CHONG, TC ;

FONSTAD, CG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (02) :171-178

[7]

Derry P. L., 1988, Optoelectronics - Devices and Technologies, V3, P117

[8] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FEKETA, D ;

CHAN, KT ;

BALLANTYNE, JM ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[9] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].

FISCHER, SE ;

FEKETE, D ;

FEAK, GB ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716

[10] LONG-LIVED INGAAS QUANTUM WELL LASERS [J].

FISCHER, SE ;

WATERS, RG ;

FEKETE, D ;

BALLANTYNE, JM ;

CHEN, YC ;

SOLTZ, BA .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1861-1862