THEORETICAL GAIN OF STRAINED-LAYER SEMICONDUCTOR-LASERS IN THE LARGE STRAIN REGIME

被引：86

作者：

CHONG, TC

FONSTAD, CG

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 02期

关键词：

D O I：

10.1109/3.16260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：171 / 178

页数：8

共 21 条

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