HIGH-POWER OPERATION OF HIGHLY RELIABLE NARROW STRIPE PSEUDOMORPHIC SINGLE QUANTUM-WELL LASERS EMITTING AT 980 NM

Ridge waveguide pseudomorphic InGaAs/GaAs/AIGaAs single quantum well lasers exhibiting record high quantum efficiencies and high output power densities (105 mW per facet from a 6 μm wide stripe) at a lasing wavelength of 980 nm have been fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. Life testing at an output power of 30 mW per uncoated facet reveals a slow gradual degradation during the initial 500 h of operation after which the operating characteristics of the lasers become stable. The emission wavelength, the high output power, and the fundamental lateral mode operation render these lasers suitable for pumping Er3+-doped fiber amplifiers. © 1990 IEEE