Cu(In,Ga)Se2 thin-film solar cells with ZnS(O,OH), Zn-Cd-S(O,OH), and CdS buffer layers

被引：52

作者：

Bhattacharya, RN ^{[1
]}

Ramanathan, K ^{[1
]}

Gedvilas, L ^{[1
]}

Keyes, B ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2005年 / 66卷 / 11期

关键词：

D O I：

10.1016/j.jpcs.2005.09.006

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Cu(In,Ga)Se-2 (CIGS) solar cell junctions prepared by chemical-bath-deposited (CBD) ZnS(O,OH), Zn-Cd-S(O,OH), and CdS buffer layers are discussed in this paper. The device performances are compared by applying CBD ZnS(O,OH), CBD Zn-Cd-S(O,OH), and CBD CdS buffer layers on similar GIGS absorbers. The C=N impurities in CBD ZnS(O,OH) are identified with Fourier transform infrared spectroscopy (FTIR) techniques. The impurities containing carbon-nitrogen bonds are most likely cyanamide (NCN2-) or thiocyanate (SCN-), which resulted from the chemical reaction of thiourea and ammonia. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1862 / 1864

页数：3

共 3 条

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[2]

CONTRERAS MA, 2003, IN PRESS 3 WORLD C P

[3] Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells [J].

Ramanathan, K ;

Contreras, MA ;

Perkins, CL ;

Asher, S ;

Hasoon, FS ;

Keane, J ;

Young, D ;

Romero, M ;

Metzger, W ;

Noufi, R ;

Ward, J ;

Duda, A .

PROGRESS IN PHOTOVOLTAICS, 2003, 11 (04) :225-230

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