Efficient electron transport in 4,4'-bis[N-(1-napthyl)-N-phenyl-amino] biphenyl and the applications in white organic light emitting devices

被引:9
作者
Lou, Yannhui [1 ,3 ]
Okawa, Yuta [3 ]
Wang, Zhaokui [2 ,3 ]
Naka, Shigeki [3 ]
Okada, Hiroyuki [3 ]
机构
[1] Soochow Univ, Sch Energy, Suzhou 215006, Jiangsu, Peoples R China
[2] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China
[3] Toyama Univ, Fac Engn, Toyama 9308555, Japan
基金
日本学术振兴会;
关键词
Ambipolar transport properties; Displacement current measurement; White OLEDs; MIXED SINGLE-LAYER; HETEROJUNCTION SOLAR-CELLS; ELECTROLUMINESCENT DEVICES; CARRIER TRANSPORT; CHARGE-TRANSPORT; HOLE TRANSPORT; N-TYPE; DIODES; TRANSISTORS; SEMICONDUCTORS;
D O I
10.1016/j.orgel.2013.01.029
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electron transport capability of 4,4'-bis[ N-(1-napthyl)-N-phenyl-amino] biphenyl (alpha-NPD) was investigated by fundamental physical measurements named as current-voltage (I-V) electrical property evaluation and displacement current measurement (DCM). In electron-dominated devices, the I-V characteristics of alpha-NPD were similar as that of (8-hydroxyquinolino) aluminum (Alq(3)) owing to their same order of electron mobilities. The interface of Al/LiF and alpha-NPD was proven to be an Ohmic contact through the evaluation of I-V characteristics at low bias regime (<3 V). And an electron injection barrier, 0.21 eV, at Al/LiF/alpha-NPD was obtained by extrapolating the temperature dependent I-V curves. The electron transport behavior in alpha-NPD film was further confirmed by DCM evaluations. Furthermore, an efficient white organic light emission device was successfully fabricated by using alpha-NPD as hole transport layer and electron transport layer, respectively. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:1015 / 1020
页数:6
相关论文
共 54 条
[31]   Carrier transport properties of organic materials for EL device operation [J].
Naka, S ;
Okada, H ;
Onnagawa, H ;
Yamaguchi, Y ;
Tsutsui, T .
SYNTHETIC METALS, 2000, 111 :331-333
[32]  
NESPUREK S, 1980, J APPL PHYS, V51, P2098, DOI 10.1063/1.327880
[33]   Threshold voltage shift and formation of charge traps induced by light irradiation during the fabrication of organic light-emitting diodes [J].
Noguchi, Yutaka ;
Sato, Naoki ;
Tanaka, Yuya ;
Nakayama, Yasuo ;
Ishii, Hisao .
APPLIED PHYSICS LETTERS, 2008, 92 (20)
[34]  
Pfuetzner S., 2001, ORGANIC ELECT, V12, P435
[35]   Electroabsorption spectroscopy on tris-(8-hydroxyquinoline) aluminum-based light emitting diodes [J].
Rohlfing, F ;
Yamada, T ;
Tsutsui, T .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) :4978-4984
[36]   Comparison of charge-carrier transport in thin films of spiro-linked compounds and their corresponding parent compounds [J].
Saragi, Tobat P. I. ;
Fuhrmann-Lieker, Thomas ;
Salbeck, Josef .
ADVANCED FUNCTIONAL MATERIALS, 2006, 16 (07) :966-974
[37]   Design rules for donors in bulk-heterojunction solar cells -: Towards 10 % energy-conversion efficiency [J].
Scharber, MC ;
Wühlbacher, D ;
Koppe, M ;
Denk, P ;
Waldauf, C ;
Heeger, AJ ;
Brabec, CL .
ADVANCED MATERIALS, 2006, 18 (06) :789-+
[38]   Metal-organic interface and charge injection in organic electronic devices [J].
Scott, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (03) :521-531
[39]   Magnetoresistance in triphenyl-diamine derivative blue organic light emitting devices [J].
Shakya, P. ;
Desai, P. ;
Kreouzis, T. ;
Gillin, W. P. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (04)
[40]  
Sze S.M., 2013, SEMICONDUCTOR DEVICE