Stimulated emission from current injected InGaN/AlGaN surface emitting diode with Al reflector at room temperature

被引：4

作者：

Egawa, T ^{[1
]}

Murata, Y ^{[1
]}

Jimbo, T ^{[1
]}

Umeno, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 05期

关键词：

light emitting diodes; stimulated emission;

D O I：

10.1049/el:19960291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the first observation of stimulated emission from a pulsed current injected InGaN/AlGaN surface emitting diode with Al reflectors al room temperature. The InGaN/AlGaN surface emitting diode, which consists of Al reflectors as top and bottom mirrors, was grown on a sapphire substrate using metalorganic chemical vapour deposition. The emission at 380nm exhibited a spectral narrowing, a superlinear dependence of output intensity on injected current, and a shift of the peak emission towards longer wavelengths under a pulsed condition at room temperature.

引用

页码：486 / 488

页数：3

共 5 条

[1]

AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517

[2]

Egawa T, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P1005, DOI 10.1109/IEDM.1995.499386

[3] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].