HIGH-POWER INGAN/GAN DOUBLE-HETEROSTRUCTURE VIOLET LIGHT-EMITTING-DIODES

被引：619

作者：

NAKAMURA, S

SENOH, M

MUKAI, T

机构：

[1] Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN/GaN double-heterostructure light-emitting diodes were fabricated. The output power was 90 muW and the external quantum efficiency was as high as 0.15% at a forward current of 20 mA at room temperature. The peak wavelengths of the electroluminescence (EL) varied between 411 and 420 nm with changes in the growth temperatures of an InGaN active layer between 820 and 800-degrees-C. The full widths at half maximum of EL were between 22 and 25 nm.

引用

页码：2390 / 2392

页数：3

共 17 条

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