Experimental results on radiation induced bulk damage effects in float-zone and epitaxial silicon detectors

被引：9

作者：

Dezillie, B ^{[1
]}

Lemeilleur, F ^{[1
]}

Glaser, M ^{[1
]}

Casse, GL ^{[1
]}

Leroy, C ^{[1
]}

机构：

[1] UNIV MONTREAL, MONTREAL, PQ, CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 386卷 / 01期

关键词：

D O I：

10.1016/S0168-9002(96)01112-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A comparative study of the radiation hardness of silicon pad detectors, manufactured from float-zone and epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 x 10(14) cm(-2) is presented. The results are compared in terms of their reverse current, depletion voltage, and charge collection as a function of fluence during irradiation and as a function of time after irradiation.

引用

页码：162 / 166

页数：5

共 7 条

[1]

BATES SJ, 1995, P 4 INT WORKSH VERT

[2] RADIATION STUDIES AND OPERATIONAL PROJECTIONS FOR SILICON IN THE ATLAS INNER DETECTOR [J].

CHILINGAROV, A ;

FEICK, H ;

FRETWURST, E ;

LINDSTROM, G ;

ROE, S ;

SCHULZ, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1995, 360 (1-2) :432-437

[3]

*CMS, TN95198 CMS

[4]

DEZILLIE B, 1996, IN PRESS P INT C RAD

[5] RADIATION HARDNESS OF SILICON DETECTORS FOR FUTURE COLLIDERS [J].

FRETWURST, E ;

CLAUSSEN, N ;

CROITORU, N ;

LINDSTROM, G ;

PAPENDICK, B ;

PEIN, U ;

SCHATZ, H ;

SCHULZ, T ;

WUNSTORF, R .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 326 (1-2) :357-364

[6] ELECTRICAL-PROPERTIES AND CHARGE COLLECTION EFFICIENCY FOR NEUTRON-IRRADIATED P-TYPE AND N-TYPE SILICON DETECTORS [J].

LEMEILLEUR, F ;

GLASER, M ;

HEIJNE, EHM ;

JARRON, P ;

OCCELLI, E ;

RIOUX, J .

NUCLEAR PHYSICS B, 1993, :415-424

[7]

MATHESON J, 1995, RD20TN36

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