Hooge's constant for carbon nanotube field effect transistors

被引：84

作者：

Ishigami, Masa ^{[1
]}

Chen, J. H.

Williams, E. D.

Tobias, David

Chen, Y. F.

Fuhrer, M. S.

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[2] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2206685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultrahigh vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current and inversely proportional to gate voltage, to channel length, and therefore to carrier number, indicating that the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be (9.3 +/- 0.4)x10(-3) The magnitude of the 1/f noise is substantially decreased by exposing the devices to air. (c) 2006 American Institute of Physics.

引用

页数：3

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[1] Enzyme-coated carbon nanotubes as single-molecule biosensors [J].