Electric-field-dependent charge-carrier velocity in semiconducting carbon nanotubes

被引：73

作者：

Chen, YF ^{[1
]}

Fuhrer, MS

机构：

[1] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

[2] Univ Maryland, Ctr Superconduct Res, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW LETTERS | 2005年 / 95卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.95.236803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 mu A, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity-saturation model with a saturation velocity of 2x10(7) cm/s.

引用

收藏

页数：4

相关论文

共 20 条

[1] Geometrical dependence of high-bias current in multiwalled carbon nanotubes -: art. no. 026804 [J].

Bourlon, B ;

Glattli, DC ;

Plaçais, B ;

Berroir, JM ;

Miko, C ;

Forró, L ;

Bachtold, A .

PHYSICAL REVIEW LETTERS, 2004, 92 (02) :4

[2] Rapid imaging of nanotubes on insulating substrates [J].

Brintlinger, T ;

Chen, YF ;

Dürkop, T ;

Cobas, E ;

Fuhrer, MS ;

Barry, JD ;

Melngailis, J .

APPLIED PHYSICS LETTERS, 2002, 81 (13) :2454-2456

[3] Engineering carbon nanotubes and nanotube circuits using electrical breakdown [J].

Collins, PC ;

Arnold, MS ;

Avouris, P .

SCIENCE, 2001, 292 (5517) :706-709

[4] Current saturation and electrical breakdown in multiwalled carbon nanotubes [J].

Collins, PG ;

Hersam, M ;

Arnold, M ;

Martel, R ;

Avouris, P .

PHYSICAL REVIEW LETTERS, 2001, 86 (14) :3128-3131

[5] HIGH-FIELD DRIFT VELOCITY OF ELECTRONS AT THE SI-SIO2 INTERFACE AS DETERMINED BY A TIME-OF-FLIGHT TECHNIQUE [J].

COOPER, JA ;

NELSON, DF .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1445-1456

[6] Extraordinary mobility in semiconducting carbon nanotubes [J].

Durkop, T ;

Getty, SA ;

Cobas, E ;

Fuhrer, MS .

NANO LETTERS, 2004, 4 (01) :35-39

[7]

Hafner JH, 2001, J PHYS CHEM B, V105, P743, DOI [10.1021/jp003948o, 10.1021/jp003498o]

[8] High-field quasiballistic transport in short carbon nanotubes [J].

Javey, A ;

Guo, J ;

Paulsson, M ;

Wang, Q ;

Mann, D ;

Lundstrom, M ;

Dai, HJ .

PHYSICAL REVIEW LETTERS, 2004, 92 (10) :106804-1

[9] Ballistic carbon nanotube field-effect transistors [J].

Javey, A ;

Guo, J ;

Wang, Q ;

Lundstrom, M ;

Dai, HJ .

NATURE, 2003, 424 (6949) :654-657

[10]

Kim W, 2002, NANO LETT, V2, P703, DOI [10.1021/nl025602q, 10.1021/n1025602q]